Three-level Half-bridge One-inductor Voltage Balance Circuit Based on SiC Device

Three-level Half-bridge One-inductor Voltage Balance Circuit Based on SiC Device

CUI Hengbin, REN Haijun and ZHOU Tao

PDF(1343 KB)

PDF(1343 KB)

Journal of Power Supply ›› 2021, Vol. 19 ›› Issue (3) : 182-188. DOI: 10.13234/j.issn.2095-2805.2021.3.182

SiC， GaN Device, New Power Device and Its Applications

Three-level Half-bridge One-inductor Voltage Balance Circuit Based on SiC Device

{{article.zuoZhe_EN}}

Author information +

History +

HeighLight

{{article.keyPoints_en}}

Abstract

{{article.zhaiyao_en}}

Key words

Cite this article

Download Citations

{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2021, 19(3): 182-188 https://doi.org/10.13234/j.issn.2095-2805.2021.3.182

References

Publishing order | Descend order by publishing year | Descend order by cited within

References

{{article.reference}}

Funding

RIGHTS & PERMISSIONS

{{article.copyrightStatement_en}}

{{article.copyrightLicense_en}}

PDF(1343 KB)

Accesses

Citation

Detail

Sections

Recommended

/

〈

〉