Drive Circuit for Enhancing the Gate Voltage Stability of SiC MOSFET at High Switching Rate

Drive Circuit for Enhancing the Gate Voltage Stability of SiC MOSFET at High Switching Rate

SHAO Tiancong, ZHENG Trillion Q., LI Zhijun, HUANG Bo and LIU Jianqiang

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Journal of Power Supply ›› 2021, Vol. 19 ›› Issue (4) : 6-15. DOI: 10.13234/j.issn.2095-2805.2021.4.6

SiC， GaN Device, New Power Device and Its Applications

Drive Circuit for Enhancing the Gate Voltage Stability of SiC MOSFET at High Switching Rate

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{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2021, 19(4): 6-15 https://doi.org/10.13234/j.issn.2095-2805.2021.4.6

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