Driving Characteristics of SiC MOSFET and Influence Analysis after Device Localization

Driving Characteristics of SiC MOSFET and Influence Analysis after Device Localization

YAO Changzhi, Student ZHANG Haodong, SHEN Hongwei, WANG Jianjun

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Journal of Power Supply ›› 2024, Vol. 22 ›› Issue (3) : 138-145. DOI: 10.13234/j.issn.2095-2805.2024.3.138

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Driving Characteristics of SiC MOSFET and Influence Analysis after Device Localization

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{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2024, 22(3): 138-145 https://doi.org/10.13234/j.issn.2095-2805.2024.3.138

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