Test Platform and Degradation Mechanism of SiC MOSFET under Dynamic High-temperature Reverse Bias Stress

ZUO Luwei, XIN Zhen, MENG Hui, Student ZHOU Ze, YU Bin, LUO Haoze

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Journal of Power Supply ›› 2024, Vol. 22 ›› Issue (3) : 211-219. DOI: 10.13234/j.issn.2095-2805.2024.3.211
Reliability Analysis

Test Platform and Degradation Mechanism of SiC MOSFET under Dynamic High-temperature Reverse Bias Stress

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{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2024, 22(3): 211-219 https://doi.org/10.13234/j.issn.2095-2805.2024.3.211

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