Research on Influence of Drain-source Voltage on Accurate Measurement of SiC MOSFET Threshold Voltage

Research on Influence of Drain-source Voltage on Accurate Measurement of SiC MOSFET Threshold Voltage

YAO Bojun, GUO Chunsheng, CUI Shaoxiong, LI Jiapeng, ZHANG Yamin

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Journal of Power Supply ›› 2024, Vol. 22 ›› Issue (3) : 258-263. DOI: 10.13234/j.issn.2095-2805.2024.3.258

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Research on Influence of Drain-source Voltage on Accurate Measurement of SiC MOSFET Threshold Voltage

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{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2024, 22(3): 258-263 https://doi.org/10.13234/j.issn.2095-2805.2024.3.258

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