Review on Gate Oxide Reliability of SiC MOSFET Devices

HU Jiahao, WANG Yinglun, DAI Haohao, DENG Xiaochuan, ZHANG Bo

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Journal of Power Supply ›› 2024, Vol. 22 ›› Issue (4) : 1-11. DOI: 10.13234/j.issn.2095-2805.2024.4.1
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Review on Gate Oxide Reliability of SiC MOSFET Devices

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{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2024, 22(4): 1-11 https://doi.org/10.13234/j.issn.2095-2805.2024.4.1

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