Study on Influence of High-temperature Gate Bias and Electron Irradiation on Threshold Voltage of SiC MOSFET

Study on Influence of High-temperature Gate Bias and Electron Irradiation on Threshold Voltage of SiC MOSFET

ZHANG Ziyang, LIANG Lin, SHANG Hai, SHENG Keyan, HUANG Jiang

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Journal of Power Supply ›› 2024, Vol. 22 ›› Issue (6) : 288-294. DOI: 10.13234/j.issn.2095-2805.2024.6.288

Power Semiconductor Devices

Study on Influence of High-temperature Gate Bias and Electron Irradiation on Threshold Voltage of SiC MOSFET

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{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2024, 22(6): 288-294 https://doi.org/10.13234/j.issn.2095-2805.2024.6.288

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