Evaluation Method for Maximum Current Conduction Capability of SiC MOSFET Device at High Temperature
LI Huakang, NING Puqi, KANG Yuhui, CAO Han, ZHENG Dan
Journal of Power Supply . 2024, (2): 386 -395 .  DOI: 10.13234/j.issn.2095-2805.2024.2.386

津公网安备12010402000979号　
津ICP备11001756号-5
Copyright © Journal of Power Supply, All Rights Reserved.
Address：16th Floor, Datong Building, No.467 Huanghe Road, Nankai District, Tianjin, China　
Post Code：300110
Tel: 022-27686327　
Fax: 022-27687886　E-mail: jops@cpss.org.cn
Powered by Beijing Magtech Co. Ltd.